Scalable sensing of interconnect current with magnetic tunnel junctions embedded in Cu interconnects

Takashi Takenaga,Y Tsuzaki,Takako Furukawa,Chikako Yoshida,Y Yamazaki,A Hatada,Mari Nakabayashi,Yoshihisa Iba,Akira Takahashi,Hideyuki Noshiro,K Tsunoda,Masaaki Aoki, Hirofumi Fukumoto,Toshihiro Sugii

Electron Devices Meeting（2013）

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摘要

A current sensor that can be integrated in back-end-of-line in the CMOS process with MTJs is proposed and evaluated. We demonstrated current sensing in Cu wires of widths of 0.24 to 2.4 μm and obtained a sensitivity of up to 4.2%/mA. Moreover, we confirmed that the combination of smaller MTJs and finer wires can suppress the effects of environmental magnetic fields.

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关键词

cmos integrated circuits,copper,electric current measurement,integrated circuit interconnections,magnetic fields,magnetic tunnelling,cmos,cu,cu interconnects,back-end-of-line,current sensor,interconnect current scalable sensing,magnetic tunnel junctions,size 0.24 mum to 2.4 mum

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