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The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures

Daoxin Dai, Bowers, J.E.,Yimin Kang

Winter Topicals（2011）

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Abstract
A normal incidence Ge/Si avalanche photodiode (APD) with the separate-absorption-charge-multiplication structure is characterized when the temperature ranges from 78K to 330K. At low temperature (78K), the dark current is depressed significantly as expected, which helps to detect a weak optical signal (as low as 1nW).
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Key words
ge-si alloys,avalanche photodiodes,dark conductivity,elemental semiconductors,germanium,silicon,ge-si,dark current,low temperature normal incidence,normal incidence avalanche photodiode,separate-absorption-charge-multiplication structure,temperature 78 k to 330 k,weak optical signal detection,avalanche photodiode,breakdown voltage,temperature measurement
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