An Ultra-Fast Floating-Body/Gate Cell for Embedded Dram
2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)(2013)
Key words
CMOS memory circuits,DRAM chips,integrated circuit design,silicon-on-insulator,2T design concept,FBGC4,SOI,design flexibility,embedded DRAM,floating body DRAM,floating gate cell,ultrafast floating body cell,ultrafast write times
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