Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
Electron Device Letters, IEEE（2014）
摘要
Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 μm) and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 μA at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption.
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关键词
ii-vi semiconductors,atomic layer deposition,electrodes,insulators,low-power electronics,thin film transistors,wide band gap semiconductors,zinc compounds,tft,zno,active layer,current 57 mua,flexible substrates,gate electrode,gate insulator,glass substrates,low power consumption,size 0.5 mum,size 20 nm,vertical channel oxide,voltage 3 v,voltage 4 v,in-ga-zn-o (igzo),oxide semiconductor,thin-film transistor (tft),vertical channel,logic gates,glass,zinc oxide,low power electronics
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