1200V SC(Schottky controlled injection)-diode, an advanced fast recovery concept with high carrier lifetime

In this paper, a 1200V novel PiN-diode concept realizing low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature over 175°C has been proposed. To realize these above-mentioned characteristics, this concept of 1200V diode design adopts a combination of flat and linear distribution of carrier concentration from anode side to cathode side and reducing injection efficiency at both sides at forward bias condition. This carrier profile can also realize reduction of voltage ringing effectively at reverse condition. Furthermore, we have successfully obtained high reverse recovery ruggedness combining a new edge termination design with Schottky contact.