Effect of Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High- Dielectric nMOSFETs

Yuting Chen,Kunming Chen,Chengli Lin,Wenkuan Yeh,Guowei Huang,Chienming Lai,Chehua Hsu,Fonshan Huang

IEEE Transactions on Electron Devices（2011）

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摘要

The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-κ/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced ...

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关键词

Logic gates,MOSFETs,Dielectrics,Plasmas,Low-frequency noise,Nitrogen

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