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Properties of the HgCdTe linear-mode e-APD

Jennifer L Beck,M A Kinch,Richard Scritchfield,M Woodall,M J Ohlson, Levi B Wood,P Mitra,Jacob T Robinson

Denver, CO（2010）

Cited 2|Views35
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Abstract
The band structure of Hg1-xCdxTe results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5μm cutoff, Hg0.7Cd0.3Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.
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ii-vi semiconductors,avalanche photodiodes,band structure,cadmium compounds,focal planes,mercury compounds,wide band gap semiconductors,hg0.7cd0.3te,electron avalanche photodiode,linear-mode e-apd gated-imaging arrays,noiseless gain,subphoton sensitivity,noise,dark current,logic gates,photonics,avalanche photodiode,ionization,effective mass
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