Some features of estimation of the diffusion length of minority carriers in cathodoluminescence microscopy
Advanced Optoelectronics and Lasers（2013）
摘要
Some possibilities for cathodoluminescence identification of electrophysical parameters of homogeneous direct-gap semiconductor materials are examined by mathematical modeling methods. Mathematical model of dependences of the intensity of monochromatic cathodoluminescence on the electron beam energy due to both linear and quadratic recombination of minority charge carriers (MCC) proposed by our group was used. It is shown how the proposed method allows for interval estimation of the diffusion length of MCC.
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关键词
cathodoluminescence,diffusion,electron-hole recombination,integrated optoelectronics,mathematical analysis,minority carriers,semiconductor materials,cathodoluminescence microscopy,diffusion length estimation,electron beam energy,electrophysical parameters,homogeneous direct-gap semiconductor materials,linear recombination,mathematical modeling methods,minority charge carriers,monochromatic cathodoluminescence intensity,quadratic recombination,
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