Recent enhancements in BSIM6 bulk MOSFET model

Harshit Agarwal,S Venugopalan,M A Chalkiadaki,Navid Paydavosi,J Duarte,Servesh Kumar Agnihotri,Chandresh Yadav,Pragya Kushwaha,Yogesh Singh Chauhan,C C Enz,Ali M Niknejad,Chenming Hu

Simulation of Semiconductor Processes and Devices（2013）

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Abstract

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=Vbd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.

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Key words

cmos integrated circuits

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