Finite difference k.p modeling of type II MQWs
Numerical Simulation of Optoelectronic Devices（2013）
摘要
In this talk, we will show some of the limitations of the finite difference technique when applied to k.p modeling of type II MQW structures. Improvements to the commercial APSYS software were made to overcome these limitations and provide sturdy rejection of spurious QW solutions. Dispersion relations and dipole moments for a sample GaAsSb/InGaAs structure will also be discussed.
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关键词
III-V semiconductors,dispersion relations,finite difference methods,gallium arsenide,indium compounds,k.p calculations,semiconductor quantum wells,APSYS software,GaAsSb-InGaAs,dipole moments,dispersion relations,finite difference k.p modeling,type II MQW structures,
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