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New Thermocouple-Based Microwave/Millimeter-Wave Power Sensor MMIC Techniques in GaAs

Microwave Theory and Techniques, IEEE Transactions(2011)

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Abstract
We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.
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Key words
iii-v semiconductors,mmic,calibration,epitaxial growth,gallium arsenide,integrated circuit design,thermocouples,gaas,iii-v epitaxial structure,calibration intervals,figure-of-merit,load ageing,millimeter-wave power sensor mmic,monolithic microwave integrated circuit design,microwave,millimeter wave,power sensor,thermocouple,temperature measurement,resistance,resistors,materials,radio frequency,sensitivity,figure of merit,indexing terms,monolithic microwave integrated circuit
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