Terahertz three-dimensional plasma resonances in InGaAs diodes: A hydrodynamic study
Microwave Integrated Circuits Conference（2010）
Abstract
We investigate 3D plasma resonances in InGaAs n+ - n - n+ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency domain for the two region types. We also emphasize a strong coupling between the plasma modes. Finally, the influence of both geometry and doping profile on the amplitude and the frequency of the resonances is evaluated.
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Key words
hydrodynamics,plasma waves,semiconductor diodes,3d plasma resonances,ingaas diodes,doping profile,electric field response,geometry,hydrodynamic study,one-dimensional poisson solver,optical beating excitation,room temperature,terahertz frequency domain,terahertz three-dimensional plasma resonances,frequency domain,gallium arsenide,electric field,oscillators,transistors,plasmas,three dimensional,resonant frequency,poisson equation,terahertz,doping
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