Demonstration of the self-mixing effect with a planar gunn diode at millimeter-wave frequency
Infrared Millimeter and Terahertz Waves（2010）
Abstract
In this paper, we demonstrate the operation of a truly planar Gunn diode working as a self-oscillating mixer at millimeter-wave frequency. The Gunn diode was fabricated in a GaAs/Al0.23Ga0.77As layer structure. An initial proof-of-concept prototype yielded a measured conversion loss of around 20±2.5 dB between 30 GHz and 40 GHz.
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Key words
gunn diodes,gallium arsenide,losses,millimetre wave diodes,millimetre wave mixers,oscillations,gaas-al0.23ga0.77as,conversion loss,frequency 30 ghz to 40 ghz,millimeter-wave frequency,planar gunn diode,self-mixing effect,self-oscillating mixer,millimeter wave,proof of concept,mixed effects
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