Self-consistent modeling of a transistor vertical-cavity surface-emitting laser

Wei Shi,B Faraji,Mark Greenberg,Jesper Berggren,Yu Xiang,Mattias Hammar,Lukas Chrostowski

Numerical Simulation of Optoelectronic Devices（2010）

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摘要

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The quantum capture/escape process is simulated using a quantum-trap model. Both the steady state and frequency response of the T-VCSEL are calculated by a numerical and analytical approach.

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关键词

iii-v semiconductors,gallium arsenide,heterojunction bipolar transistors,indium compounds,integrated optics,integrated optoelectronics,laser cavity resonators,laser frequency stability,optical design techniques,quantum optics,quantum well lasers,radiation pressure,surface emitting lasers,transistors,in0.49ga0.51p-gaas,frequency response,integrated heterojunction bipolar transistor,multiple quantum well transistor laser,optical design,optoelectronic properties,quantum capture process,quantum escape process,quantum-trap model,self-consistent modeling,transistor vertical-cavity surface-emitting laser,vertical cavity surface emitting laser,steady state,condensed matter physics

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