Enhancement of switching margin by utilizing superior pinned layer stability for sub-20nm perpendicular STT-MRAM

W C Lim, Y J Lee, J M Lee,W K Kim, J H Kim,K W Kim,Young Suk Park,Hee Jung Shin,J H Jeong,M A Kang, Y H Kim,Soo Young Kim,Yong Chul Cho,H L Park,H S Ahn,J H Park,S C Oh,S O Park,Sangkwon Jeong,S W Nam,H K Kang,Eun Suk Jung

VLSI Technology（2013）

引用 22|浏览29

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摘要

We report enhanced switching margin in perpendicular MTJ cells at 20nm node. By introducing a novel structure with superior pinned layer stability, stable magnetization switching without magnetostatic interference has been achieved. Wide switching field margins over 40s have been secured for reproducible STT switching as well as a tightly controlled Hoffset below 100Oe. Switching voltage margin of the novel structure are also wide enough to show definite STT switching.

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关键词

mram devices,interference,magnetostatics,stability,stt switching,magnetization switching,magnetostatic interference,perpendicular mtj cells,perpendicular stt-mram,size 20 nm,superior pinned layer stability,switching margin enhancement,switching voltage margin,mram,pinned layer stability,switching margin,switches,stability analysis

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