Junction field-effect transistor based on GaAs core-shell nanowires

O Benner,Andrey Lysov,C Gutsche,Gaston Keller, Christoph Schmidt,W Prost,F J Tegude

Indium Phosphide and Related Materials（2013）

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摘要

Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.

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关键词

iii-v semiconductors,gallium arsenide,junction gate field effect transistors,nanowires,p-n junctions,dc measurements,gaas,core-shell nanowires,current 260 na,diode-type i-v characteristics,drain current,electrical properties,hysteresis-free transient behavior,junction field-effect transistor,n-channel junction fet,nanowire fet,nanowire channel diameter,radial pn-junctions,size 190 nm,transconductance,jfet,nanowire,dielectrics,transistors,logic gates

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