Sub-10nm 1T-1R cell design using HfOx based ReRAM cell

Jinwoo Noh,Minseok Jo,Chang Yong Kang,Gilmer, D.,P D Kirsch,R Jammy,J C Lee,B H Lee

VLSI Technology, Systems, and Applications（2013）

Cited 0|Views29

No score

Abstract

The operation properties of ReRAM for 1T1R structure are simulated using semi-empirical circuit model. From the simulation result, it has been found that the operation of 1T1R structure is seriously affected by various parasitics and the performance of access transistor. For sensing operation, a read circuit using constant current source provided better stability than constant voltage source usually used for charge-based memory device.

Translated text

Key words

constant current sources,hafnium compounds,random-access storage,1T1R cell design,1T1R structure,HfOx,ReRAM cell,access transistor,charge-based memory device,constant current source,read circuit,resistive random access memory,semiempirical circuit model,stability

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined