Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor
Nuclear Science, IEEE Transactions(2010)
摘要
We present the key results of multiple dark current (DC) characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at lowand room temperature. This gives us the opportunity to discuss the relevance on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and the limited effects of electron displacement damage on dark current.
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关键词
CCD image sensors,electron radiation,proton effects,radiation hardening (electronics),HAS2 radiation-hardened active pixel sensor,charge coupled devices,cobalt-60 irradiation,damage defect annealing,dark current,electron irradiation,proton irradiation,total ionizing dose,CMOS devices,dark current,displacement damage,electron radiation effects,image sensors,ionizing dose,proton radiation effects
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