Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200–1200 and produce a threshold voltage shift less than 0.25 V after 10 000 of stress. The resulting LFN measurements indicate that the noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.