Simulation of a novel single junction thin film solar cell
Next-Generation Electronics（2013）
Abstract
A novel single junction thin film solar cell structure ITO/p- a-Si:H /i1- a-Si:H/i2- μc-Si:H/n- μc-Si:H/ITO is studied with Silvaco TCAD tool in this paper. The simulation data predicts that the thickness of the maximum conversion efficiency is between 250-500nm. For the best efficiency, the intrinsic μc-Si:H layer is predicted between 1500-2500nm. The results indicate the conversion efficiency is higher than that of the conventional amorphous silicon solar cell 7.53% and 8.14% for the conventional microcrystalline solar cells. To compare with the nanocrystalline (nc-Si:H) heterojunction thin film solar cell, the conversion efficiency of the proposed structure is increased more than 21.92%.
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Key words
silicon,solar cells,thin film devices,silvaco tcad tool,amorphous silicon solar cell,conversion efficiency,efficiency 21.92 percent,efficiency 7.53 percent,efficiency 8.14 percent,microcrystalline solar cells,nanocrystalline heterojunction thin film solar cell,single junction thin film solar cell
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