Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

Shakila Reyaz,Carl Samuelsson,Robert Malmqvist,Mehmet Kaynak,Anders Rydberg

Microwave Conference（2012）

引用 27|浏览7

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摘要

This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.

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关键词

bicmos integrated circuits,ge-si alloys,s-parameters,field effect mimic,microswitches,semiconductor materials,bicmos process technology,mems switch circuits,rf pads,s-parameter data,spdt switches,sige,frequency 40 ghz to 80 ghz,loss 2 db to 3 db,loss 3 db to 4 db,measured in-band attenuation,millimeter-wave rf-mems spdt switch networks,mm-wave capacitive rf-mems based single-pole-double-throw switches,process repeatability,single-chip reconfigurable ic,wireless communication,millimeter-wave,radio frequency microelectromechanical systems,silicon germanium,switches,s parameters,natural sciences

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