Room-temperature operation of transistor vertical-cavity surface-emitting laser (vol 49, pg 208, 2013)
Electronics Letters（2013）
摘要
The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50°C.
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关键词
iii-v semiconductors,aluminium compounds,distributed bragg reflector lasers,elemental semiconductors,epitaxial growth,gallium arsenide,heterojunction bipolar transistors,indium compounds,laser beams,laser cavity resonators,laser modes,optical fabrication,quantum well lasers,silicon,silicon compounds,surface emitting lasers,algaas-gaas-ingaas-si-sio2,t-vcsel,tqw,continuous-wave operation,current 0.8 ma,dielectric top dbr,electrical pnp-type bipolar junction transistor,electrical terminals,emitter-collector voltage,epitaxial regrowth process,intracavity contacting scheme,laser output power,low threshold base-current,power 1.8 mw,room-temperature operation,temperature 293 k to 298 k,temperature 50 degc,transistor vertical-cavity surface-emitting laser,triple-quantum-well active layer,undoped bottom dbr,voltage-controlled operation mode
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