Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems

S Gross,Tzvi Maimon,Fabian Cossoy,Mark N Ruberto, G Normatov,Alexander Rivkind, N Telzhensky,Rotem Banin,Ori Ashckenazi,Assaf Benbassat,Sharon Zaguri,Gabriel Hara, M Zajac, Nir Shahar,Shay Shahaf, Hani Yousef, Eyal Mor,Yishai Eilat,Anna Nazimov, Zeev Beer,Amir Fridman,Ofir Degani

Radio Frequency Integrated Circuits Symposium（2010）

引用 13|浏览4

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摘要

A 3-stream, 802.11n WLAN MIMO transceiver, with fully integrated PAs and LNAs in both 2.4GHz and 5GHz bands, and a T/R switch in the 2.4GHz band, was implemented in a standard 90nm CMOS technology. The transmitter achieves an EVM of -28dB at output power of 19dBm and 17dBm in the 2.4GHz and 5GHz bands, respectively. The transmitter power consumption per Mb of data, in 3-stream mode, is 3.7mW/Mb and 4.5mW/Mb in the 2.4GHz and 5GHz, respectively. This is four times lower comparing to the single stream (SISO) mode. The receiver NF is 4dB in both bands, and power consumption is 1.6mW/Mb and 1.7mW/Mb, in the 2.4GHz and 5GHz bands, respectively.

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关键词

cmos integrated circuits,mimo communication,low noise amplifiers,power amplifiers,radio transmitters,radiofrequency integrated circuits,transceivers,wireless lan,3-stream mode,802.11n wlan mimo transceiver,cmos technology,t/r switch,dual-band cmos transceiver,frequency 2.4 ghz,frequency 5 ghz,fully integrated pa,highly integrated front-end,low noise amplifier,power amplifier,power consumption,size 90 nm,transmitter,3×3,cmos,ieee 802.11n,integrated t/r switch,mimo,rc filter,rf transceiver,wlan,frequency synthesizer,integrated fem,integrated lna,integrated pa,power generation,noise measurement,dual band,front end,switches,transmitters

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