Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

Byung Hee Hong,Y C Jung,S W Hwang,K H Cho,Kyoung Hwan Yeo,Yun Young Yeoh,Sung Dae Suk, Meng Li,D W Kim,Donggun Park,K S Oh,W S Lee

Honolulu, HI（2008）

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摘要

Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.

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关键词

mosfet,nanowires,silicon,si,single electron tunneling behaviors,gate-all-around nanowire mosfet,temperature measurement,isotopes,physics,oscillators,tunneling,room temperature,heart,impurities,capacitance,electrons,logic gates,quantum dots

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