X-Band Receiver Front-End in Fully Depleted SOI Technology

Pompei L. Orlando,K. Groves,Aji Mattamana,Tony Quach,P. Watson,L. Johnson,Peter W. Wyatt,C. L. Chen,C. K. Chen,R. Drangmeister,Craig L. Keast

2012 IEEE International Conference on Ultra-Wideband（2012）

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关键词

CMOS integrated circuits,silicon-on-insulator,S-band operation,X-band receiver front-end,bandwidth 600 MHz,fully depleted SOI technology,fully-depleted silicon-on-insulator CMOS technology,gain 20 dB to 21.5 dB,high dynamic range receiver,noise figure 5.6 dB to 6 dB,single conversion architecture,size 0.18 mum,wide band range receiver,Balun,CMOS,FDSOI,Filter,Low Noise Amplifier,Mixer,RF receiver,Single Down Conversion

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