Millimeter-wave Design and Fabrication of GaAs Micromachined Patch Antenna
2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications（2012）
Abstract
A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz.
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Key words
III-V semiconductors,gallium arsenide,microfabrication,micromachining,microstrip antennas,millimetre wave antennas,GaAs,Ka-band frequency,frequency 36.29 GHz,frequency 36.3 GHz,gain 3 dB,low effective dielectric region,micromachined patch antenna,millimeter-wave design,size 300 mum,Ka waveband,bandwidth,dry etching,micro-electromechanical systems (MEMS) antenna
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