Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes

Baile Chen,Qiugui Zhou,D.C. Mcintosh,Jinrong Yuan,Yaojia Chen,Wenlu Sun,J.C. Campbell,A.l. Holmes

Electronics Letters（2012）

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摘要

An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO2 spheres. The surface showed a normal-incidence reflection of <;5% for wavelengths from 900 to 2500<;nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation.

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关键词

antireflection coatings,III-V semiconductors,indium compounds,nanolithography,p-i-n photodiodes,semiconductor diodes,silicon compounds,surface texture

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