A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors

Annie Wang,Burag Yaglioglu,Charles G. Sodini,Vladimir Bulovic,Akintunde I. Akinwande

IEEE/OSA Journal of Display Technology（2010）

引用 0|浏览2

暂无评分

摘要

We report a low temperature ( ~ 100°C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, dielectric layer. The transistors show a field-effect mobility of (12±0.8) cm2 V-1 s-1, on/off ratio of 108 and turn-off voltage of Voff = -1 V. This work demonstrates that organic a...

查看译文

关键词

FETs,Dielectric substrates,Plasma temperature,Semiconductor films,Dielectric materials,Amorphous materials,Silicon compounds,OFETs,Semiconductivity,Optical films

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要