Waveguide engineering for hybrid Si / III-V lasers and amplifiers

R B Swint,S J Spector,C L Chen,J J Plant,T M Lyszczarz,P W Juodawlkis

Lasers and Electro-Optics（2012）

Cited 24|Views22

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Abstract

Using adiabatic tapers, hybrid silicon / III-V lasers and amplifiers are integrated with conventional thin (t = 0.25 μm) silicon waveguides. Amplifiers have ~12 dB intrachip gain, and similar lasers have thresholds of 35 mA.

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Key words

iii-v semiconductors,elemental semiconductors,gallium arsenide,gallium compounds,indium compounds,integrated optics,optical waveguides,quantum well lasers,semiconductor optical amplifiers,silicon,ingaasp,si,adiabatic tapers,current 35 ma,hybrid si-iii-v amplifiers,hybrid silicon-iii-v lasers,intrachip gain,silicon waveguides,size 0.25 mum,waveguide engineering,indexes

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