Interface modification by In-S soaking process on CIGS solar cells with CBD-ZNS buffer layer
Photovoltaic Specialists Conference（2012）
Abstract
ZnS is a promising candidate for replacing the CdS buffer layer on Cu(In,Ga)Se2 (CIGS) solar cells. In this study, CIGS was soaked into InCl3 (0.005 M)- CH3CSNH2 (0.1 M) aqueous solution at room temperature for several seconds before the chemical bath deposition of ZnS buffer layer. The performance of In-S soaked device was strongly enhanced from 0.24% to 7.31% along with increasing in Jsc, Voc, FF, and carrier life time. The enhancement may be attributed to an appropriate interface modification, deduced from Photoluminescence (PL), Time-Resolved Photoluminescence (TR-PL), and Current-Voltage measurement respectively.
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Key words
buffer layers,carrier lifetime,copper compounds,gallium compounds,indium compounds,liquid phase deposition,photoluminescence,semiconductor thin films,solar cells,ternary semiconductors,cbd-zns buffer layer,cigs solar cells,cu(inga)se2-zns,in-s soaked device,in-s soaking process,inci3-ch3csnh2 aqueous solution,tr-pl,chemical bath deposition,current-voltage measurement,interface modification,performance enhancement,time-resolved photoluminescence,cigs,buffer layer,carrier life time,solar cell,zinc sulfide,radio frequency
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