Investigation Of Cuinp2s6 Family Layered Crystals For Ultrasonic Transducers
Xian（2009）
摘要
Investigation results of piezoelectric and dielectric (20 Hz - 1 MHz) properties of layered CuInP2S6 crystals with different compositions and stoichiometry are presented. It was shown that largest phase transition temperature T-c approximate to 330 K was observed for indium rich CuInP2S6 crystals. In these CuIn1+delta P2S6 crystals at room temperature electromechanical coupling constant comparable to that of pure CuInP2S6 could be obtained after appropriate poling. Critical dielectric anomalies are found at the phase transitions. It was shown that above phase transition the dielectric properties are strongly influenced by high electrical conductivity. The DC conductivity and conductivity relaxation time exhibits an anomaly close to the phase transition temperature T-c=330 K. Its activation energy exhibit only a weak change close to the ferrielectric phase transition temperature in investigated crystals.
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关键词
copper compounds,dielectric materials,dielectric relaxation,dielectric thin films,electrical conductivity,ferroelectric transitions,indium compounds,phosphorus compounds,piezoelectric materials,stoichiometry,ultrasonic transducers,CuInP2S6,DC conductivity,activation energy,dielectric property,electrical conductivity,ferrielectric phase transition temperature,frequency 20 Hz to 1 MHz,layered crystals,phase transition temperature,piezoelectric property,relaxation time,room temperature electromechanical coupling constant,stoichiometry,temperature 293 K to 298 K,temperature 330 K,ultrasonic transducers,
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