Correlated Flicker Noise and Hole Mobility Characteristics of Uniaxially Strained SiGe FINFETs
Electron Device Letters, IEEE（2012）
Abstract
Hole mobility and flicker noise characteristics of uniaxially strained ( 110)/〈110〉 Si0.75 Ge0.25 pFINFETs (SSGOI0.25) are investigated in this letter. Equivalent gate referred flicker noise in SSGOI0.25 is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in SSGOI0.25 and in Si pFINFETs is 10-5 and 10-4, respectively. The lower value of the Hooge parameter in SSGOI0.25 pFINFETs is attributed to improved phonon-limited mobility compared to the SOI pFINFETs. SSGOI0.25 FINFETs are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported to date.
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Key words
Ge-Si alloys,MOSFET,flicker noise,hole mobility,110)/〈110〉 uniaxially strained FINFET,Hooge mobility fluctuation,SOI pFINFET,SSGOI0.25,Si0.75Ge0.25,correlated flicker noise characteristics,correlated number,equivalent gate referred flicker noise,high-bias regime,hole mobility characteristics,improved phonon-limited mobility,low-bias regime,nonplanar devices,$(hbox{110})/langle hbox{110}rangle$ uniaxial strain,FINFETs,Hooge parameter,SiGe,flicker noise,hole mobility
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