Investigation of radiation-stable elements of CMOS VLSI on SOI substrates

A Demchenko, V Syakersky,Sergey Shvedov,V P Bondarenko, L Dolgyi,Yu V Bogatyrev

Sevastopol（2009）

引用 23|浏览2

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摘要

Experimental technique and influence of gamma irradiation on electrical characteristics of test elements (resistors, diodes, MOS transistors) fabricated in SOI structures are presented.

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关键词

cmos integrated circuits,vlsi,gamma-rays,radiation hardening (electronics),silicon-on-insulator,cmos vlsi,soi substrates,gamma irradiation,radiation-stable elements,test elements,helium,data mining,silicon on insulator,gamma rays,manufacturing,very large scale integration

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