Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Yosuke Kimura,Akiko Kobayashi,Dai Ishikawa,Akinori Nakano,Kiyohiro Matsushita,Nobuyoshi Kobayashi

Interconnect Technology Conference（2012）

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摘要

In order to implement highly porous PECVD SiOCH films with k = 2.0 in ILD integration, the UV-assisted restoration to remove plasma damages related with dry etch and pore sealing by plasma enhanced ALD (PEALD)-SiN formation to prevent the metal penetration into the film during subsequent metallization process was investigated. Sequential application of the restoration and pore sealing processes was proved to be the best solution enabling successful sealing capability with preserving pristine k-value of the porous SiOCH films.

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关键词

atomic layer deposition,integrated circuit metallisation,low-k dielectric thin films,plasma cvd,porous materials,silicon compounds,pecvd,sin,sioch,uv assisted restoration,dry etch,highly porous films,metal penetration,metallization process,plasma damages,plasma enhanced ald,pore sealing,image restoration,chemicals,plasmas,films

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