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Reliability Characterization of 32nm High-K Metal Gate SOI Technology with Embedded DRAM

Steve Mittl, Ann Swift,Ernest Wu,Dimitris Ioannou,Fen Chen, Greg Massey,Nilufa Rahim, Mike Hauser, Paul Hyde

IEEE International Reliability Physics Symposium(2012)

Cited 4|Views5
Key words
High-K,Metal Gate,eDRAM,eFUSE,BTI,HCI,SHE,SER,SRAM,Self Heating
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