Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs
Power Semiconductor Devices and ICs（2012）
摘要
We have developed a new methodology to study the dynamic ON-resistance (RON) of high-voltage GaN High-Electron-Mobility Transistors (HEMTs). With this technique, we have investigated dynamic RON transients over a time span of 11 decades. In OFF to ON time transients, we observe a fast release of trapped electrons through a temperature-independent tunneling process. We attribute this to border traps at the AlGaN barrier/AlN spacer interface. Over a longer time scale, we observe conventional thermally activated electron detrapping from traps at the surface of the device or inside the AlGaN barrier. These findings provide a path for power switching device engineering with minimum dynamic RON.
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关键词
ii-vi semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,wide band gap semiconductors,algan-aln,gan,dynamic on-resistance,high-voltage hemt,high-voltage high-electron- mobility transistors,off time transients,on time transients,power switching device engineering,temperature-independent tunneling process,thermally activated electron detrapping,hemt,border traps,high voltage,switches,high electron mobility transistor
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