1.6Kv, 2.9 Mω Cm2 Normally-off P-Gan HEMT Device

Injun Hwang,Hyoji Choi,JaeWon Lee,Hyuk Soon Choi,Jongseob Kim,Jongbong Ha,Chang-Yong Um, Sun-Kyu Hwang,Jaejoon Oh, Jun-Youn Kim,Jai Kwang Shin,Youngsoo Park,U-in Chung,In-Kyeong Yoo,Kinam Kim

2012 24th International Symposium on Power Semiconductor Devices and ICs（2012）

引用 113|浏览12

关键词

II-VI semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,wide band gap semiconductors,E-mode devices,GaN-AlGaN-GaN,Si,normally-off HEMT device,on-state resistance,voltage 1.6 kV,voltage 3 V

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要