D3. Design and simulation of novel single-electron coding nano-circuits using room temperature summing-inverter gates
Radio Science Conference（2012）
Abstract
The Single-Electron (SE) summing-inverter (SI) NOR and NAND gates are among the basic functional SE circuits. In this paper, the design of multi-input SE SI NOR and NAND gates are reviewed. Novel SE decimal-to-BCD encoders and SE binary decoders, which are composed of SI gates, are designed for all combinations of active inputs and outputs. The simulated designs work properly with only one voltage source of 500 mV for a wide range of temperatures (from 40K to 400K). The detailed schematic diagrams along with the corresponding SIMON 2.0 simulation results at room temperature (that include input and output signals as well as the stability diagrams) of the novel SE decimal-to-BCD encoders as well as the developed SE binary decoders are presented.
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Key words
binary codes,circuit stability,logic gates,nanoelectronics,single electron devices,summing circuits,se binary decoder,se circuit,se decimal-to-bcd encoder,simon 2.0 simulation,multiinput se si nand gate,multiinput se si nor gate,room temperature summing-inverter gate,single-electron coding nanocircuit,single-electron summing-inverter,stability diagram,temperature 293 k to 298 k,temperature 40 k to 400 k,voltage 500 mv,nand gate,nor gate,binary-coded-decimal (bcd),decoder,encoder,room-temperature,single-electron (se),single-electron transistor (set),summing-inverter (si),simulation,room temperature,decoding,silicon,stability analysis
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