A New Model for Through-Silicon Vias on 3-D IC Using Conformal Mapping Method
Microwave and Wireless Components Letters, IEEE（2012）
摘要
Based on the conformal mapping technique, a novel macro- π model is proposed to accurately predict the electrical performance of a low pitch-to-diameter ratio (P / D) through-silicon via (TSV) pair on the 3-D IC. The model combines the conventional resistance and inductance (RL) circuit with several parallel capacitances and conductance (CG) circuit. The accuracy-improved CG model rigorously considers the proximity effect. The model can be established by using the derived closed-form formula that is related to geometrical parameters of the TSVs. Compared with the conventional π-type model, the proposed model can significantly reduce the error of CG value from 25% to 2% with respect to a full-wave simulation, and thus the insertion loss can be well predicted from dc to 40 GHz.
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关键词
integrated circuit modelling,millimetre wave integrated circuits,three-dimensional integrated circuits,3d ic,tsv,accuracy-improved cg model,closed-form formula,conductance circuit,conformal mapping method,frequency 40 ghz,full-wave simulation,inductance circuit,insertion loss,low pitch-to-diameter ratio through-silicon via,parallel capacitances,3-d integrated circuits,conformal mapping,equivalent circuit model,through-silicon via (tsv),conformal map,solid modeling,integrated circuit,capacitance,proximity effect,closed form formula,through silicon via,silicon,equivalent circuit
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