Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells

P Brand, Y Veschetti,V Sanzone,R Cabal,X Pages, K Vanormelingen,P Vermont

Photovoltaic Specialists Conference（2011）

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摘要

This work aims at evaluating aluminium oxide (Al2O3) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al2O3/SiNx was studied and compared to the one obtained with thermal SiO2/SiNx. An efficiency of 18.3% was achieved using Al2O3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.

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关键词

aluminium compounds,contact resistance,current density,metallisation,passivation,silicon compounds,solar cells,al2o3-sin,sio2-sin,emitter passivation layer,emitter saturation current density,fill factor,n-type silicon solar cells,screen printed metallization,silicon,boron,metallization

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