Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

Izumi Hirano,Yasushi Nakasaki,Shigeto Fukatsu,Akiko Masada,Yuichiro Mitani,Masakazu Goto,Koji Nagatomo,Seiji Inumiya,Katsuyuki Sekine

Montreal, QC（2009）

Cited 12|Views27

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Abstract

The slope parameter of Weibull plot of Tbd, beta, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore beta of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to beta in terms of the origin of large beta for metal-gate/high-k.

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Key words

weibull distribution,field effect transistors,hafnium compounds,silicon compounds,hfsion,bipolar stress,gate dielectrics,metal gate electrode,n-fets,metal-gate,tddb,component,high-k,dielectric materials,voltage,logic gates,metal gate,dielectric breakdown,electrodes,high k,correlation,stress

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