Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

Yoji Kawasaki,Yoshiki Maruyama,Hidefumi Yoshimura,Hiroshi Miyatake,Kentaro Shibahara

Kyoto（2009）

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摘要

The authors have examined the influence of the amorphous layer on sheet resistance (Rs) utilizing B18HX + and its dimer implantation. Because of partial decomposition of B18H22 in an ion source chamber, the extracted ion beam consists of a lot of kinds of B18HX + ions. In addition, as a result of polymerization, the dimer of B18HX + ions are also included. Deeper amorphization is expected for the dimer implantation, because it is reported that the dimer ion of As formed the thicker amorphized layer than that of monomer.

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关键词

amorphisation,amorphous semiconductors,boron,electrical resistivity,elemental semiconductors,ion implantation,semiconductor junctions,silicon,b cluster implantation,b18hx +,si:b,amorphization depth,shallow junction formation,sheet resistance,ion beam,spectroscopy,ellipsometry,amorphous materials,annealing

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