High Performance 300mm Backside Illumination Technology for Continuous Pixel Shrinkage

D. N. Yaung,B. C. Hsieh,C. C. Wang,J. C. Liu,T. J. Wang,W. D. Wang, C. C. Chuang,C. Chao,Y. L. Tu,C. S. Tsai,T. L. Hsu, F. Ramberg, W. P. Mo,H. Rhodes,D. Tai,V. C. Venezia,S. G. Wuu

2011 International Electron Devices Meeting（2011）

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关键词

CMOS image sensors,annealing,dielectric thin films,elemental semiconductors,integrated circuit noise,silicon,wafer-scale integration,BSI technology,CMOS image sensor process,Si,backside illumination sensor,backside junction formation,continuous pixel shrinkage,dielectric film structure,high performance backside illumination technology,optical performance,silicon thickness variation,size 0.9 mum,size 300 mm,thermal annealing,wafer distortion

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