SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

Grurmann, K., Walter, D.,Herrmann, M.,Gliem, F.

Radiation Effects Data Workshop（2011）

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摘要

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

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关键词

NAND circuits,flash memories,radiation effects,MBU angular dependence,Micron 8-Gbit SLC NAND-flash memories,SEU angular dependence,Samsung 8-Gbit SLC NAND-flash memories,heavy-ion irradiation,omnidirectional sensitivity,storage capacity 8 Gbit,

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