A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS

Yi-Keng Hsieh,Jing-Lin Kuo,Huei Wang,Liang-Hung Lu

Microwave and Wireless Components Letters, IEEE（2011）

引用 36|浏览7

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摘要

A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.

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关键词

cmos analogue integrated circuits,attenuators,field effect mimic,impedance matching,low noise amplifiers,millimetre wave amplifiers,wideband amplifiers,cmos process,lna,binary controlled attenuators,broadband low-noise amplifier,current 25 ma,frequency 60 ghz,gain 18.9 db to 7.9 db,gain-boosted input stage,programmable gain levels,size 65 nm,variable-gain control,voltage 1.8 v,broadband,low-noise amplifiers (lnas),millimeter-wave,positive feedback,variable-gain amplifiers,linearity,gain,noise measurement,noise,cmos integrated circuits,millimeter wave

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