Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy

Hiroki Sugiyama,Haruki Yokoyama,Naoteru Shigekawa,Takatomo Enoki,Atsushi Teranishi,Safumi Suzuki,Masahiro Asada, Ntt Corportion,Morinosato Wakamiya

Newport Beach, CA（2009）

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摘要

This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even 2-nm-thick InAlP etch stoppers was demonstrated. High peak current density (jP) of 5.4 times 105 A/cm2 with a peak-to-valley ratio (PVRs) of 1.6 was obtained in RTDs with 1.6-nm-thick In0.75Al0.25P barriers, which reflects the excellent abruptness and flatness of the heterointerfaces.

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关键词

iii-v semiconductors,mocvd,aluminium compounds,current density,electron mobility,etching,gallium arsenide,high electron mobility transistors,indium compounds,resonant tunnelling diodes,semiconductor epitaxial layers,semiconductor heterojunctions,vapour phase epitaxial growth,hemts,inalp-ingaas,movpe,metal-organic vapor-phase epitaxy,resonant tunneling diodes,size 1.6 nm,size 2 nm,ultrathin modulation-doped heterojunctions,wet-etching stoppers,heterojunctions,diodes,resonant tunneling diode,high electron mobility transistor,epitaxial growth,wet etching

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