172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology

We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220 Aring highly doped base and a 1200 Aring collector designed to support current densities in excess of 12 mA/mum2. Transistors with emitter width of 0.25-mum have exhibited simultaneous measured f T and f max frequencies in the 500 GHz range. Frequency divide-by-two digital circuits designed and fabricated with this InP bipolar technology have demonstrated maximum clock frequency of 172 GHz. Manufacturing capabilities for mixed-signal circuits of increased complexity are also reported with improvements in resolution and bandwidth.