A 1.05V 1.6mw 0.45°C 3Σ-Resolution ΔΣ-based Temperature Sensor with Parasitic-Resistance Compensation in 32nm CMOS.
ISSCC（2009）
Key words
CMOS integrated circuits,bipolar transistors,delta-sigma modulation,temperature measurement,temperature sensors,BJT,CMOS,DeltaSigma-based temperature sensor,digital demodulation,input current chopping,multiple current ratio measurement,parasitic-resistance compensation,power 1.6 mW,reference voltage,remote temperature sensing,size 32 nm,temperature 0.45 degC,tolerance variation,voltage 1.05 V
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