Scalability of Advanced Partially Depleted N-Mosfet Devices on Biaxial Strained SOI Substrates
ULIS 2009 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON（2009）
Key words
MOSFET,electron mobility,isolation technology,semiconductor device models,silicon-on-insulator,stress relaxation,biaxial strained SOI substrates,elastic stress relaxation,electron mobility,partially depleted n-MOSFET devices,scalability,shallow trench isolation,short channel n-MOSFET,source/drain resistance
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