Piezoelectrically actuated micromechanical BAW resonators
Beijing（2008）
Abstract
We report on piezoelectrically actuated 13 MHz silicon beam resonators operating in the fundamental length extensional BAW mode. The resonance is evoked using an aluminum nitride layer grown on top of the resonator. We demonstrate quality factors as high as Q~55000 in vacuum, and transduction factors of the order of eta~20 muN=V. The anchor loss is studied using designs with variations in the support beam width and in the resonator orientation (crystalline direction).
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Key words
iii-v semiconductors,q-factor,acoustic resonators,aluminium compounds,bulk acoustic wave devices,crystal resonators,elemental semiconductors,micromechanical resonators,piezoelectric actuators,piezoelectric transducers,semiconductor growth,silicon,wide band gap semiconductors,aln-si,aluminium nitride layer,anchor loss,crystalline direction,frequency 13 mhz,micromechanical baw resonator design,piezoelectrically actuated resonator,quality factor,silicon beam resonator,transduction factor,data mining,q factor,acoustics,crystals
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